Heteroepitaxy of CBN

Using diamond as a substrate, which has a lattice constant and surface energy very close to those of CBN, allows heteroepitaxial growth of CBN. The success of these epitaxial single-crystal CBN thin films has made it possible to effectively use CBN thin films to manufacture semiconductor devices.

 

 

In addition, other materials can also be used as substrates for heteroepitaxial growth of CBN films. For example, after pre-treatment of the silicon substrate, TBN can be grown directly on the substrate, effectively reducing the thickness of the transition layer.

 

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